Journal of Engineering in Industrial Research

h-index: 18     i10-index: 25

Influence of Precursor Temperature on the Bandgap Engineering of Zr-Doped CrS for Photovoltaic Application

Document Type : Original Research Article

Authors

Laeticia U. Ugwu 1, 2
Imosobomeh L. Ikhioya 3
Azubuike J. Ekpunobi 2

1 Department of Physics Education, Federal College of Education (Technical) Umunze, Anambra State, Nigeria

2 Department of Physics and Industrial Physics, Nnamdi Azikiwe University, Awka, Nigeria

3 Department of Physics and Astronomy, University of Nigeria, Nsukka, 410001, Nigeria

https://doi.org/10.48309/jeires.2024.5.5
Abstract
The physical properties of Zr-doped CrS films were examined in-depth in this study, focusing on the influence of precursor temperature during electrochemical deposition for photovoltaic use. The spectra show a decrease in absorbance from 300 to 600 nm in the visible range and an increase from 650 to 1100 nm in the ultraviolet range. The transparency of chromium sulfide (CrS) films is enhanced by adding a zirconium dopant at precursor temperatures ranging from 45 to 55 oC. The energy bandgap of Zr-doped CrS and CrS varies between 2.35 and 3.33 eV. As the precursor temperature increases, the crystallite size of the CrS and Zr-doped CrS material increases. This shows a better quality and growth of the material's grains. Precursor temperature influences the crystal structure of CrS and Zr-doped CrS films. The studies revealed that variations in the precursor temperature influence the film's crystallinity, phase composition, and grain size.

Keywords

Semiconductor
Zirconium
CrS
Bandgap energy
optical
XRD

Subjects

OPEN ACCESS

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Journal of Engineering in Industrial Research
Volume 5, Issue 1
Winter 2024
Pages 52-64

  • Receive Date 24 April 2024
  • Revise Date 23 May 2024
  • Accept Date 23 July 2024

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