Opto-Electrical Characterization of SnO2 Semiconductor Based Thin Layer for the Fabrication of Innovative Diode
Pages 1-18
https://doi.org/10.48309/jeires.2025.499842.1150
Mostefa Benhaliliba
Abstract This study focuses on the thin film and related device based on indium tin oxide (SnO2). It is produced onto glass and n-type silicon by spray pyrolysis and thermal evaporation processes. The structural, optical, dielectric, and surface properties of In-doped SnO2 layers are investigated, and important parameters have been determined. A polycrystalline structure and a main orientation along (200) are confirmed by X-ray patterns. UV-Vis measurements of Indium-doped SnO2 layers show a transmittance peak of 95% and 97% in the visible band. A wide optical band gap Eg of 4.06 and 4.13 eV is recorded and SnO2 nanostructures have been revealed. The electrical conductivity s(T) profile of SnO2 film is reducing as 1000/T values are increasing. An evidence of dark-light conditions on the I-V characteristics of our diode based on In-doped SnO2 is confirmed. Effect of In-doping level on the parameters extracted from I-V characteristics is emphasized. The effect of light on the diode parameters, such as ideality factor, saturation current, and photocurrent, is observed, which gives it the possibility of being used as a photodiode.

