h-index: 18     i10-index: 25

Insertion of the MnSnIand CsGeI Two Absorber ‎Layers in Order to Perform the Photovoltaic Behavior ‎of the Perovskite Solar Cell

Document Type : Original Research Article

Authors

1 Film Device Fabrication-Characterization and Application FDFCA Research Group USTOMB, ‎‎31130 Oran, Algeria‎

2 Department of Physics, Khadir Mohideen College, Adirampattinam, Thanjavur District, Tamil Nadu 614701, India‎

Abstract
This study suggests novel lead-free perovskite solar cell architecture with double absorber layers of CsGeI3 and MASnI3 to eliminate lead toxicity while maintaining high efficiency. Using SCAPS-1D simulations, critical parameters-absorber layer thickness, doping density, and defect density- were systematically optimized to enhance photovoltaic performance. The optimized structure (FTO/ZnO/MASnI3/CsGeI3/NiO) achieved a power conversion efficiency (PCE) of 32.07%, with an open-circuit voltage (Voc) of 1.166 V, Short-circuit current density (Jsc) of 30.72 mA/cm², and fill factor (FF) of 89.52%. Key findings reveal that a 1200 nm thickness for both CsGeI3 and MASnI3 layers maximizes light absorption and carrier generation, while a doping density of 1020 cm-3 strengthens the built- in electric field, improving charge separation. Defect density optimization highlights the critical role of the MASnI3layer, where reducing defects to 1012 cm-3 minimizes the recombination losses. Interface defect densities at NiO/CsGeI3, CsGeI3/MASnI3, and MASnI3/ZnO were optimized to 1010 cm-3, with MASnI3/ZnO exhibiting the highest sensitivity to defects. This work demonstrates the viability of lead-free perovskites for high-efficiency solar cells. The results pave the way for experimental validation and scalable production, aligning with safe renewable energy purposes.

Graphical Abstract

Insertion of the MnSnI₃ and CsGeI₃ Two Absorber ‎Layers in Order to Perform the Photovoltaic Behavior ‎of the Perovskite Solar Cell

Keywords

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Volume 6, Issue 3
Spring 2025
Pages 195-211

  • Receive Date 17 March 2025
  • Revise Date 19 April 2025
  • Accept Date 01 May 2025