Insertion of the MnSnI₃ and CsGeI₃ Two Absorber Layers in Order to Perform the Photovoltaic Behavior of the Perovskite Solar Cell
Pages 195-211
https://doi.org/10.48309/jeires.2025.512985.1181
Abdullah Belbia, Keltoum Dris, Mostefa Benhaliliba, Abbas Ayeshamariam
Abstract This study suggests novel lead-free perovskite solar cell architecture with double absorber layers of CsGeI3 and MASnI3 to eliminate lead toxicity while maintaining high efficiency. Using SCAPS-1D simulations, critical parameters-absorber layer thickness, doping density, and defect density- were systematically optimized to enhance photovoltaic performance. The optimized structure (FTO/ZnO/MASnI3/CsGeI3/NiO) achieved a power conversion efficiency (PCE) of 32.07%, with an open-circuit voltage (Voc) of 1.166 V, Short-circuit current density (Jsc) of 30.72 mA/cm², and fill factor (FF) of 89.52%. Key findings reveal that a 1200 nm thickness for both CsGeI3 and MASnI3 layers maximizes light absorption and carrier generation, while a doping density of 1020 cm-3 strengthens the built- in electric field, improving charge separation. Defect density optimization highlights the critical role of the MASnI3layer, where reducing defects to 1012 cm-3 minimizes the recombination losses. Interface defect densities at NiO/CsGeI3, CsGeI3/MASnI3, and MASnI3/ZnO were optimized to 1010 cm-3, with MASnI3/ZnO exhibiting the highest sensitivity to defects. This work demonstrates the viability of lead-free perovskites for high-efficiency solar cells. The results pave the way for experimental validation and scalable production, aligning with safe renewable energy purposes.




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