h-index: 18     i10-index: 25

Improved Physical Properties of Zirconium Incorporation into the Iattice of Chromium Telluride Material

Document Type : Original Research Article

Authors

1 Department of Physics, Delta State University, Abraka, Delta State, Nigeria

2 Department of Physics, College of Education, Warri, Delta State, Nigeria

3 Department of Physics, Federal University Lokoja, Nigeria

Abstract
The successful synthesis of undoped and doped CrTe was achieved through electrochemical deposition. The film exhibited a 2θ value of 46.51o and a hexagonal phase with orientations (111), (112), (121), and (200). The CrTe image exhibits a surface with compacted particles, indicating a favorable shaving surface. The absorption of photons is evident on the surface of the substrate with a well-packed grain size. The surface micrograph of the CrTe precursor was altererd by the addition of zirconium. The doped films exhibited a stone-like micro-grain in their surface morphology. As the dopant concentration increased, specific grains showed an enlargement and thickening of the stone-like nano-grains. The doped CrTe material successfully achieved a uniform deposition of nanoparticles across the entire solar substrate. There was a decrease in the material's thickness from 104.02 to 103.23 nm, accompanied by an increase in film resistivity from 5.49 to 6.03Ω.m. As a result, conductivity decreased from 1.82 to 1.65 S/m. The undoped exhibited an energy bandgap of 1.62 eV. The molar concentration of zirconium has an inverse relationship with the energy bandgap of doped CrTe, with the range decreasing from 1.68 eV at 0.1 mol, 1.42 eV 0.2 mol, and 1.41 eV 0.3 mol. Incorporating zirconium into the crystal lattice of chromium telluride (CrTe) introduces novel and distinct physical properties, primarily by modifying its optical and electrical characteristics. The key novelty is demonstrating a non-linear relationship between Zr concentration and surface morphology. The study identifies that 0.02 mol of Zr is the ideal amount for achieving superior dispersion and the finest grain structure. It also provides a clear mechanistic explanation for why a higher concentration (0.03 mol) fails, due to particle agglomeration.

Graphical Abstract

Improved Physical Properties of Zirconium Incorporation into the Iattice of Chromium Telluride Material

Keywords

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[1] Samuel, S.O., James, F.E., JT, Z., EP, O., Ekpekpo, A., Ikhioya, I.L. Effect of dopant on the energy bandgap on strontium sulphide doped silver for optoelectronic application. Materials Research Innovations, 2024, 28(1), 8-18.
[2] Ikhioya, I.L., Ugwuoke, C.O., Ochai-Ejeh, F.U. Optimisation of temperature regulator on spray pyrolysis cobalt selenide doped erbium (CoSe: Er) semiconductor material for photovoltaic application. Materials Research Innovations, 2024, 28(1), 32-39.
[5] Akpu, N.I., Asiegbu, A., Nnanna, L., Ikhioya, I., Mgbeojedo, T. Investigation on the influence of varying substrate temperature on the physical features of yttrium doped cadmium selenide thin films materials. SSRG International Journal of Applied Physics, 2021, 8(2), 37-46.
[6] Ikhioya, I., Okeoghene, I., AC, B., Josephine, O., Yahaya, A. Effect of Precursor pHon Cadmium Doped Manganese Sulphide (CdMnS) Thin Films for Photovoltaic Application. International Journal of Material Science and Engineering, 2020, 6(2), 1-8.  
[7] Ikhioya, I.L., Okoli, D., Ekpunobi, A.J. Effect of temperature on SnZnSe semiconductor thin films for photovoltaic application. SSRG International Journal of Applied Physics, 2019, 6(2), 55-67.
[9] Bouriche, A., Benouis, C., Benhaliliba, M., Dris, K. AI Bridges theory and practice: 18% efficient SIS solar cells via defect-tuned ZnO/TiO₂/p-Si structure. Journal of Engineering in Industrial Research , 2025, 6(4), 282-297.
[10] Ojegu, E.O., Ikhioya, I.L. Investigating the Impact of Temperature on MgSe Structural, Optical and Electrical Features to Optimize its Use in Optoelectronics. Journal of Engineering in Industrial Research, 2024, 5(1), 16-26.
[11] Ugwu, L.U., Ikhioya, I.L., Ekpunobi, A.J. Influence of Precursor Temperature on the Bandgap Engineering of Zr-Doped CrS for Photovoltaic Application. Journal of Engineering in Industrial Research, 2024, 5, (1) 52 64.
[12] Lucky, I.I., Ugbo, F., Ijabor, B.O. Growth and characterization of manganese sulphide (MnS) thin films. International Journal for Research in Applied and Natural Sciences, 2018, 4(1), 1-9.
[13]  Ikhioya, I.L., Whyte, G.M., Nkele, A.C. Temperature-modulated nanostructures of ytterbium-doped Cobalt Selenide (Yb-CoSe) for photovoltaic applications. Journal of the Indian Chemical Society, 2023, 100(1), 100848.
[14] Udofia, K.I., Ikhioya, I.L., Agobi, A.U., Okoli, D.N., Ekpunobi, A.J. Effects of zirconium on electrochemically synthesized tin selenide materials on fluorine doped tin oxide substrate for photovoltaic application. Journal of the Indian Chemical Society, 2022, 99(10), 100737.
[15] Yang, H., Wu, A., Yi, H., Cao, W., Yao, J., Yang, G., Zou, Y.C. Atomic scale insights into the epitaxial growth mechanism of 2D Cr3 Te4 on mica. Nanoscale Advances, 2023, 5(3), 693-700.
[16] Zhang, S., Wu, H., Yang, L., Zhang, G., Xie, Y., Zhang, L., Chang, H. Two-dimensional magnetic atomic crystals. Materials Horizons, 2022, 9(2), 559-576.
[17] Jiang, X., Chen, F., Zhao, S., Su, W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm, 2021, 23(47), 8239-8254.
[18] Chen, C., Chen, X., Wu, C., Wang, X., Ping, Y., Wei, X., Zhou, J. Air‐stable 2D Cr5Te8 nanosheets with thickness‐tunable ferromagnetism. Advanced Materials, 2022, 34(2), 2107512.
[19] Sun, S., Liang, J., Liu, R., Shen, W., Wu, H., Tian, M., Lin, W. Anisotropic magnetoresistance in room temperature ferromagnetic single crystal CrTe flake. Journal of Alloys and Compounds, 2022, 890, 161818.
[20] Wang, Y., Kajihara, S., Matsuoka, H., Saika, B.K., Yamagami, K., Takeda, Y., Nakano, M. Layer-number-independent two-dimensional ferromagnetism in Cr3Te4. Nano Letters, 2022, 22(24), 9964-9971.
[21] Yang, Y., Jia, L., Wang, D., Zhou, J. Advanced strategies in synthesis of two‐dimensional materials with different compositions and phases. Small Methods, 2023, 7(4), 2201585.
[22] Luo, F.S., Ying, J.S., Zhang, Y., Li, S.S., Tang, F., Chen, T.W., Zheng, R.K. The effects of substrate temperature on the magnetic and magnetotransport properties of Cr1-xTe epitaxial films. Journal of Magnetism and Magnetic Materials, 2022, 550, 169084.
[23] Guo, Y., Kang, L., Yu, S., Yang, J., Qi, X., Zhang, Z., Liu, Z. CVD growth of large‐scale and highly crystalline 2D chromium telluride nanoflakes. ChemNanoMat, 2021, 7(3), 323-327.
[25]  Yang, J., Zhu, C., Deng, Y., Tang, B., Liu, Z. Magnetism of two-dimensional chromium tellurides. Iscience, 2023, 26(5).
[26] Wang, M., Kang, L., Su, J., Zhang, L., Dai, H., Cheng, H., Han, J. Two-dimensional ferromagnetism in CrTe flakes down to atomically thin layers. Nanoscale, 2020, 12(31), 16427-16432.
[27] Chen, C., Chen, X., Wu, C., Wang, X., Ping, Y., Wei, X., Zhou, J. Air‐stable 2D Cr5Te8 nanosheets with thickness‐tunable ferromagnetism. Advanced Materials, 2022, 34(2), 2107512.
[28]  Ugwu, L.U., Ikhioya, I.L., Ekpunobi, A.J. Influence of Precursor Temperature on the Bandgap Engineering of Zr-Doped CrS for Photovoltaic Application. Journal of Engineering in Industrial Research, 2024, 5(1), 52-64.
[29] Arulanantham, A., Gunavathy, K., Rangasami, C., Thomas, R., Mohanraj, P., AlFaify, S., Shkir, M. Comprehensive investigation on ruthenium doped Sn2S3 thin films for photo sensing applications. Physica B: Condensed Matter, 2024, 693, 416380.
Volume 7, Issue 2
Spring 2026
Pages 76-88

  • Receive Date 30 September 2025
  • Revise Date 22 October 2025
  • Accept Date 08 November 2025